Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET

ARUN SAMUEL T.S, Arumugam N, Theodore Chandra S

Abstract


In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique. The analytical model includes the calculation of the surface potential, lateral electric field and vertical electric field. Finally the drain current is extracted by using Kane’s model. The device simulations are carried out using 2-D device simulator, Technology Computer Aided Design (TCAD). The model can be used to study the impact of GaN based SG TFET and GAA TFET in terms of higher ON current characteristics. The results expected by the model are compared with those obtained by 2-D simulation to verify the accuracy of the proposed analytical model.


Full Text:

PDF

References


R. Li et al., “AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V,” IEEE Electron Device Lett., vol. 33, no. 3, pp. 363–365, Mar. 2012.

A. Vandooren et al., “Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs,” Solid-State Electron., vol. 83, pp. 50–55, May 2013.

S. Brocard, M. Pala, and D. Esseni, “Design options for heterojunction tunnel FETs with high on current and steep sub-VT slope,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2012, pp. 5.4.1–5.4.4.

M. Kim, Y. K. Wakabayashi, M. Yokoyama, R. Nakane, M. Takenaka, and S. Takagi, “Ge/Si heterojunction tunnel field-effect transistors and their post metallization annealing effect,” IEEE Trans. Electron Devices, vol. 62, no. 1, pp. 9–15, Jan. 2015.

W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, “Polarization engineered III-nitride heterojunction tunnel field-effect transistors” IEEE J. Exploratory Solid-State Comput. Devices Circuits, vol. 1, no. 1, pp. 28–34, Dec. 2015.

Alan Seabaugh; Sara Fathipour; Wenjun Li; Hao Lu; Jun Hong Park; Andrew C. Kummel; Debdeep Jena; Susan K. Fullerton-Shirey; Patrick Fay, “Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels 2015 IEEE International Electron Devices Meeting (IEDM) 2015 Pp: 35.6.1 - 35.6.4

TS Arun Samuel, NB Balamurugan, Sibitha,S, Saranya,R & Vanisri, D 2013, ‘Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors’, Journal of Electrical Engineering & Technology, vol. 8, no. 6, pp. 1481- 1486.

TS Arun Samuel, NB Balamurugan, 2013, ‘An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications’, Journal of Electrical Engineering & Technology, vol. 9, no. 1, pp. 247-253.

TS Arun Samuel, NB Balamurugan, Niranjana, T & Samyuktha, B 2013, ‘Analytical Surface potential model with TCAD simulation verification for evaluation of Surrounding Gate TFET’, Journal of Electrical Engineering & Technology, Vol. 8, pp. 742-748, 2013

Eng-Huat Toh, Grace Huiqi Wang, et al. Device physics and design of germanium tunnelling field-effect transistor with source and drain engineering for low power and high performance applications, Journal of Applied Physics, 103(10):104504, 2008.

Wetzel, C.; Suski, T.; Ager, J.W. III; Fischer, S.; Meyer, B.K.; Grzegory, I.; Porowski, S. (1996) Strongly localized donor level in oxygen doped gallium nitride, International conference on physics of semiconductors, Berlin (Germany), 21–26 July 1996.

Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasak "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics.Volume 28, Part 2, Number 12 1989.

EO Kane, ‘Zener tunneling in semiconductors’, Journal of Physics and Chemistry of Solids, vol. 12, no. 2, pp.181-188, 1960.

EO Kane, ‘Theory of tunneling’, Journal of Applied Physics, vol. 32, no. 1, pp. 83-91, 1961.


Refbacks

  • There are currently no refbacks.


E-Journal © ECTI Asscoiation, Thailand, Contact Us.
Web: http://ecti-eec.org/